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Optically Excited Defects

  • Chapter
Cohesive Properties of Semiconductors under Laser Irradiation

Part of the book series: NATO ASI Series ((NSSE,volume 69))

Abstract

Laser irradiation of a solid is known to result in the excitation of electrons from states located below the Fermi level, EF, up to states located above EF.

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Author information

Authors and Affiliations

  1. Faculté des Sciences, Université de l’Etat, 7000, Mons, Belgium

    Michel Wautelet

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  1. Michel Wautelet
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Editor information

Editors and Affiliations

  1. Université de l’Etat, Mons, Belgium

    Lucien D. Laude (Professor of Solid State Physics) (Professor of Solid State Physics)

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© 1983 Martinus Nijhoff Publishers, The Hague

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Wautelet, M. (1983). Optically Excited Defects. In: Laude, L.D. (eds) Cohesive Properties of Semiconductors under Laser Irradiation. NATO ASI Series, vol 69. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-6890-5_20

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  • DOI: https://doi.org/10.1007/978-94-009-6890-5_20

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-009-6892-9

  • Online ISBN: 978-94-009-6890-5

  • eBook Packages: Springer Book Archive

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