Photodetectors and Electronics

  • J. Watson


A photosensor and its associated electronics for use in fringe counting must fulfil several functions, viz.,
  1. (i)

    it must be capable of recognising the presence or absence of a fringe; that is, it must be able to distinguish between the light and dark (i.e. ambient) regions produced by the associated optical system;

  2. (ii)

    It must also operate down to d.c. in cases where the fringes can form a stationary pattern (and where chopper, or a.c. carrier, techniques are not used); and

  3. (iii)

    It must be sufficiently fast in operation to make possible the counting of fringes which appear at the highest frequency dictated by the system involved.



Leakage Current Electric Field Gradient Shot Noise Operational Amplifier Noise Equivalent Power 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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  1. 1.
    Silonex Inc., formerly National Semiconductors Ltd (Montreal). Datasheet NSL-367.Google Scholar
  2. 2.
    Gage, S., Hodapp, M., Evans, D. and Sorensen, H. Optoelectronics Applications Manual, 1977, Hewlett-Packard and McGraw-Hill, New York, chapter 4.Google Scholar
  3. 3.
    Watson, J. Semiconductor Circuit Design, 3rd Edn, 1977, Adam Hilger and Halsted Press, New York.Google Scholar
  4. 4.
    Edgerton, Germeshausen & Grier Inc., Data Sheet D3003B-2 and Application Note D3000C-1.Google Scholar
  5. 5.
    Integrated Photomatrix Ltd, Information Sheet No. 205¡A.Google Scholar
  6. 6.
    Kelly, B. O. Lateral-effect photodiodes. Laser Focus Magazine, March, 1976, 38–40.Google Scholar
  7. 7.
    Petersson, G. P. and Lindholm, L. E. Position-sensitive light detectors with high linearity. IEEE J. Solid-State Circuits , SC-13(3), June, 1978, 392–9.CrossRefGoogle Scholar
  8. 8.
    Dyck, R. H. and Weckler, G. P. Integrated arrays of silicon photodetectors for image sensing. IEEE Trans. Electron Devices, ED-15, April, 1968, 196–201.CrossRefGoogle Scholar
  9. 9.
    IEEE J. Solid-State Circuits, Special issue on optoelectric devices and circuits, SC-13(1), February, 1978.Google Scholar
  10. 10.
    Tait, J. M. Design & application of silicon photodetectors. New Electronics, 25 July, 1978, 27–31.Google Scholar
  11. 11.
    Graeme, J. Op. Amp. boosts phototransistor speed. Electronic Design, 5, March, 1972, 62.Google Scholar
  12. 12.
    Edgerton, Germeshausen & Grier Inc., Data Sheets D30078–1, D3009 B-l and Application Note D3011B-1.Google Scholar
  13. 13.
    Centronic, Information Sheet on Series OS 1–5.Google Scholar
  14. 14.
    Agourdis, D. C. and Fox, R. J. Transresistance instrumentation amplifier. Proc. IEEE, 66(10), October, 1978, 1286–7.CrossRefGoogle Scholar
  15. 15.
    New, B. M. Versatile electrooptic alignment system for field applications. Applied Optics, 13, April, 1974, 937–41.Google Scholar
  16. 16.
    Danby, P. C. G. Signal recovery using a phase-sensitive detector. Electronic Engineer, January, 1970, 36–41.Google Scholar
  17. 17.
    Brower, R. Taking noise out of weak signals. Electronics, 8 July, 1968, 80–90.Google Scholar
  18. 18.
    Ortec Brookdeal (Bracknell, Berkshire/Oak Ridge, Tennessee). Guide to lockin amplifiers.Google Scholar

Copyright information

© Applied Science Publishers Ltd 1983

Authors and Affiliations

  • J. Watson
    • 1
  1. 1.Department of Electrical and Electronic EngineeringUniversity CollegeSwanseaUK

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