Abstract
The unijunction transistor (Fig. 5.1) consists of a rod of n-type silicon to the ends of which ohmic (non-rectifying) contacts B1 and B2 are made. The resistance of the silicon rod, called the interbase resistance, is usually between 5 kΩ and 10 kΩ. On one side of this silicon rod is formed a p-n junction by alloying a wire of aluminium (trivalent so producing p-type material); this junction is usually located near to the base B2. An emitter electrode E is brought out from the p-type material; this emitter divides the interbase resistance in the ratio RB2 to RB1.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
Author information
Authors and Affiliations
Rights and permissions
Copyright information
© 1979 K.J. Close and J. Yarwood
About this chapter
Cite this chapter
Close, K.J., Yarwood, J. (1979). Unijunction transistors; silicon controlled rectifiers: characteristics and applications. In: Experimental Electronics for Students. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-5767-1_5
Download citation
DOI: https://doi.org/10.1007/978-94-009-5767-1_5
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-009-5769-5
Online ISBN: 978-94-009-5767-1
eBook Packages: Springer Book Archive