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Molecular Beam Epitaxial Iii–V Compounds: Dopant Incorporation, Characteristics And Behavior*

  • Chapter
Molecular Beam Epitaxy and Heterostructures

Part of the book series: NATO ASI Series ((NSSE,volume 87))

Abstract

In this lecture, an attempt is made to present all the available knowledge on the incorporation and behavior of impurities into III–V Semiconductors grown by molecular beam epitaxy. Initially, attention is paid to unintentional impurities with regard to their possible origin and mechanisms of incorporation. Intentional donors and acceptors are then systematically treated from the viewpoints of their incorporation mechanism, their behaviors, solubilities and limitations as donors species for practical applications. Wherever possible the incorporation kinetics are considered algebraically and used to give some insight to mechanism of incorporation.

Work to appear in “Technology and Physics of Molecular Beam Epitaxy”, edited by E.H.C. Parker, Plenum Publishing Corporation, New York.

School of Electrical Engineering, Cornell University Ithaca, NY 14853 USA

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Authors and Affiliations

  1. GEC Hirst Research Centre, East Lane, Wembly, Middlesex, UK

    Colin E. C. Wood

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  1. Colin E. C. Wood
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  1. IBM T.J. Watson Research Center, Yorktown Heights, 10598, NY, USA

    Leroy L. Chang

  2. Max-Planck-lnstitute, D-7000, Stuttgart 80, Germany

    Klaus Ploog

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© 1985 Martinus Nijhoff Publishers, Dordrecht

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Wood, C.E.C. (1985). Molecular Beam Epitaxial Iii–V Compounds: Dopant Incorporation, Characteristics And Behavior*. In: Chang, L.L., Ploog, K. (eds) Molecular Beam Epitaxy and Heterostructures. NATO ASI Series, vol 87. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-5073-3_5

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