Abstract
To date the ion beam sputtering deposition (IBSD) technique has been used to deposit metallic, dielectric, superconductor and semiconductor films ∣1∣. Many promising results have been obtained, for example good mechanical characteristics of the films. In the demanding domain of microelectronics, a thorough knowledge, theoretical as well as experimental, of the sputtering and deposition processes seems to be necessary for determining the potential for using IBSD technique to deposit thin films ∣2∣. We have studied IBSD underlying mechanism with the aim of forming epitaxial thin films. This paper reports some results of this study.
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© 1986 Martinus Nijhoff Publishers, Dordrecht
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Pellet, C., Schwebel, C., Meyer, F., Gautherin, G. (1986). Growth of Thin Films by UHV ION Beam Sputtering Deposition Technique. In: Kiriakidis, G., Carter, G., Whitton, J.L. (eds) Erosion and Growth of Solids Stimulated by Atom and Ion Beams. NATO ASI Series, vol 112. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-4422-0_30
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DOI: https://doi.org/10.1007/978-94-009-4422-0_30
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-8468-0
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