Abstract
Ion implantation modifies the electric and atomic structures of solids and it potentially has various important scientific and technological applications. However, for a successful application of ion implantation it is necessary to understand well the physical and chemical mechanisms involved. At present, the low-energy mechanisms of the atomic collisions phenomena in solids is perhaps the least understood domain of ion implantation. This is partly due to the complexity of the mechanisms involved at low energies in which the energetic atoms and their cascade atoms end the “slowing-down” process and begin the “thermalization” process where the various chemical forces dominate the purely collisional physical forces in a much larger time frame. Also, at present, the analytically available solution for the transport of charged particles does not adequately represent the low-energy region.
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© 1986 Martinus Nijhoff Publishers, Dordrecht
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Goktepe, O.F. (1986). Ion Implantation Mechanisms and Related Computational Issues. In: Kiriakidis, G., Carter, G., Whitton, J.L. (eds) Erosion and Growth of Solids Stimulated by Atom and Ion Beams. NATO ASI Series, vol 112. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-4422-0_2
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DOI: https://doi.org/10.1007/978-94-009-4422-0_2
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