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Erosion and Growth of Solids Stimulated by Atom and Ion Beams pp 324–337Cite as

Molecular Beam Epitaxy And Selective MBE Deposition of GaAs Device Structures

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Part of the book series: NATO ASI Series ((NSSE,volume 112))

Abstract

Molecular Beam Epitaxy (MBE) is an ultrahigh vacuum technique for preparing thin epitaxial layers of II–VI1,2 III–V3–5 and IV–VI6,7 semiconductors. The growth process consisting of incident molecular beams provides a high degree of control over layer doping, composition, uniformity and thickness. Such control is not achievable with liquid phase epitaxy (LPE) or chemical vapor Deposition (CVD) techniques.

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Author information

Authors and Affiliations

  1. Research Center of Crete and Physics Department, University of Crete, Heraklion, Crete, Greece

    A. Christou

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  1. A. Christou
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Editor information

Editors and Affiliations

  1. Physics Department, University of Crete, Heraklion, Crete, Greece

    G. Kiriakidis

  2. Department of Electronic and Electrical Engineering, University of Salford, Salford, UK

    G. Carter

  3. Physics Department, Queen’s University, Kingston, Canada

    J. L. Whitton

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© 1986 Martinus Nijhoff Publisher

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Christou, A. (1986). Molecular Beam Epitaxy And Selective MBE Deposition of GaAs Device Structures. In: Kiriakidis, G., Carter, G., Whitton, J.L. (eds) Erosion and Growth of Solids Stimulated by Atom and Ion Beams. NATO ASI Series, vol 112. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-4422-0_19

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  • DOI: https://doi.org/10.1007/978-94-009-4422-0_19

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-8468-0

  • Online ISBN: 978-94-009-4422-0

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