Abstract
The emergence of VLSI (Very Large Scale Integration) in silicon device technology has resulted in the creation of major industries in the USA, Japan and Europe. The influence of VLSI on the design of military hardware, consumer products and telecommunications has stimulated a rapid advance in communication and presentation of information and could even herald fundamental changes in the pattern of employment and social structure. The developments in science and technology on which the industry is based and on which it depends to be economically viable have produced highly refined silicon crystal substrates as the basic raw material, thin film materials and patterning technology (currently reaching the limits set by optical wavelengths), and sophisticated packaging and device testing equipment. The next generation of silicon devices will range from chips capable of storing up to a million bits of information to signal processors with many levels of interconnect and minimum dimensions of about 1 micron.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Elliott DJ: Integrated Circuit Fabrication Technology. Published by McGraw-Hill 1982.
Chapman B: Glow Discharge Processes. Published by John Wiley J Sons. 1980.
VLSI Electronics Microstructure Science, Vol 8, 1 Plasma Processing for VLSI. Ed N G Einspruch, Published by Academic Press Inc 1984.
Kushner MJ: A Kinetic Study of the Plasma Etching Process; J Appl Phys 53 (4) April 1982.
Suitable materials are manufactured by Du Pont and Hitachi.
Suitable materials are manufactured by Allied Chemicals and Merck.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1986 Martinus Nijhoff Publisher
About this chapter
Cite this chapter
Heslop, C.J. (1986). Plasma Etching for Silicon Device Technology. In: Kiriakidis, G., Carter, G., Whitton, J.L. (eds) Erosion and Growth of Solids Stimulated by Atom and Ion Beams. NATO ASI Series, vol 112. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-4422-0_16
Download citation
DOI: https://doi.org/10.1007/978-94-009-4422-0_16
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-8468-0
Online ISBN: 978-94-009-4422-0
eBook Packages: Springer Book Archive