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Semiconductor Heterojunction Interfaces: Nontransitivity of Energy-band Discontiuities

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Book cover Electronic Structure of Semiconductor Heterojunctions

Part of the book series: Perspectives in Condensed Matter Physics ((PCMP,volume 1))

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Abstract

A direct experimental test has revealed that heterojunction energy-band discontinuities are nontransitive. This result was obtained by an x-ray photoemission-spectroscopy investigation of abrupt (110) interfaces in the heterojunction series Ge/CuBr, CuBr/GaAs, and GaAs/Ge. The sum of the valence-band discontinuities for these intefaces is 0.64 ± 0.05 eV, a large deviation from the zero sum expected by transitivity.

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Authors and Affiliations

  1. Electronics Research Center, Rockwell International, Thousand Oaks, California, 91360, USA

    J. R. Waldrop & R. W. Grant

Authors
  1. J. R. Waldrop
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  2. R. W. Grant
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Editor information

Editors and Affiliations

  1. University of Wisconsin-Madison, USA

    Giorgio Margaritondo

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© 1988 Editoriale Jaca Book spa, Milano

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Waldrop, J.R., Grant, R.W. (1988). Semiconductor Heterojunction Interfaces: Nontransitivity of Energy-band Discontiuities. In: Margaritondo, G. (eds) Electronic Structure of Semiconductor Heterojunctions. Perspectives in Condensed Matter Physics, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-3073-5_31

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  • DOI: https://doi.org/10.1007/978-94-009-3073-5_31

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-90-277-2824-1

  • Online ISBN: 978-94-009-3073-5

  • eBook Packages: Springer Book Archive

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