Abstract
The interfaces between a thin (~20-Å) abrupt epitaxial layer of Ge grown on substrates of (111), (110), and (100) GaAs have been investigated with x-ray photoelectron spectoscopy. Observed changes in core-level binding energies have been directly related to the crystallographic orientation dependence of interface dipoles and variations of band-gap discontinuities. The orientation variation of the band-gap discontinuities is found to be a significant fraction (≈\(\frac{1}{4}\)) of the total band-gap discontinuity.
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Grant, R.W., Waldrop, J.R., Kraut, E.A. (1988). Observation of the Orientation Dependence of Interface Dipole Energies in Ge-GaAs. In: Margaritondo, G. (eds) Electronic Structure of Semiconductor Heterojunctions. Perspectives in Condensed Matter Physics, vol 1. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-3073-5_11
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DOI: https://doi.org/10.1007/978-94-009-3073-5_11
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