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Reliability of High Speed HEMT Integrated Circuits and Multi-2DEG Structures

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Semiconductor Device Reliability

Part of the book series: NATO ASI Series ((NSSE,volume 175))

Abstract

The reliability of HEMT I.Cs indicates that the enhancement mode circuits are the weak point in the circuit’s reliability. Rapid degradation, has been observed at temperatures above 200°C. The HEMT I.C. reliability results tend to follow the enhancement mode degradation statistics. The primary degradation mode is the confinement of the 2DEG channel and various lateral diffusion effects, which occur during circuit operation.

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Author information

Author notes

  1. A. Christou

    Present address: Naval Research Laboratory, Washington DC, USA

Authors and Affiliations

  1. Foundation of Research and Technology - Hellas, Physics Department, University of Crete, Heraklion, Crete, Greece

    A. Christou

Authors
  1. A. Christou
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Editor information

Editors and Affiliations

  1. Surface Physics Branch, Naval Research Laboratory, Washington, D.C., USA

    A. Christou

  2. Bell Communications Research, Red Bank, NJ, USA

    B. A. Unger

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© 1990 Kluwer Academic Publishers

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Christou, A. (1990). Reliability of High Speed HEMT Integrated Circuits and Multi-2DEG Structures. In: Christou, A., Unger, B.A. (eds) Semiconductor Device Reliability. NATO ASI Series, vol 175. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2482-6_32

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  • DOI: https://doi.org/10.1007/978-94-009-2482-6_32

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-7620-3

  • Online ISBN: 978-94-009-2482-6

  • eBook Packages: Springer Book Archive

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