Abstract
The reliability of metal electrodes on GaAs is limited by diffusion processes, which can be enhanced by local high electric fields, and by electron wind effects, when large current densities occur. In both cases, the semiconductor-surface quality before metallization has a strong influence. New metallization schemes are presented to reduce such problems.
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References
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© 1990 Kluwer Academic Publishers
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Hartnagel, H.L. (1990). Reliability Limitations of Metal Electrodes on GaAs. In: Christou, A., Unger, B.A. (eds) Semiconductor Device Reliability. NATO ASI Series, vol 175. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2482-6_12
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DOI: https://doi.org/10.1007/978-94-009-2482-6_12
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-7620-3
Online ISBN: 978-94-009-2482-6
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