Abstract
The physics of core excitons in semiconductors is reviewed, with emphasis on the fact that Hjalmarson-Frenkel ‘deep’ core excitons are observed, and co-exist with Wannier-Mott ‘shallow’ excitons which are not normally resolved experimentally. The theory of Hjalmarson-Frenkel excitons is extended to excitons in superlattices, and the Ga3d core exciton in GaAs 1-x P x /GaP strained-layer superlattices is predicted to change from a resonance in the conduction band (with apparent negative binding energy) to a bound state in the gap (positive binding energy), as the GaAs 1-x P x layer thickness decreases.
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References
F. Bassani, Appl. Optics 19, 4093 (1980), and reference therein.
W. Kohn, in Solid State Physics (edited by F. Seitz and D. Turnbull, Academic Press, New York, 1957), Vol. 5, pp. 258–321.
J.M. Luttinger and W. Kohn, Phys. Rev. 97, 969 (1955).
R.S. Knox, Theory of Excitons, Academic, New York, 1963.
H.P. Hjalmarson, P. Vogl, D.J. Wolford and J.D. Dow, Phys. Rev. Lett. 44, 810 (1980).
A. Quattropani, F. Bassani, G. Margaritondo and G. Tinivella, Nuovo Cimento 51B, 335 (1979), and reference therein.
F.C. Brown, in Solid State Physics, edited by H. Ehrenreich, F. Seitz and D. Turnbull, Academic, New York, 1974, Vol. 29, p. 1 and references therein.
F.C. Brown and O.P. Rustgi, Phys. Rev. Lett. 28, 497 (1972).
G. Margaritondo and J.E. Rowe, Phys. Lett. 59A, 464 (1977).
R.S. Bauer, R.Z. Bachrach, D.E. Aspnes and J.C. McMenamin, Nuovo Cimento B39, 409 (1977).
M. Altarelli, J. Phys. C 4, 95 (1978).
J.D. Dow, D.R. Franceschetti, P.C. Gibbons and S.E. Schnatterly, J. Phys. F 5, L211 (1975).
M. Lax, J. Chem. Phys. 20, 1752 (1952).
H.P. Hjalmarson, H. Büttner and J.D. Dow, Phys. Rev. B 24, 6010 (1981).
H.P. Hjalmarson, H. Büttner and J.D. Dow, Phys. Lett. 85A, 293 (1981).
K.E. Newman and J.D. Dow, Solid State Commun. 50, 587 (1984).
M.A. Bowen, R.E. Allen and J.D. Dow, Phys. Rev. B30, 4617 (1984).
B.A. Bunker, S.L. Hulbert, J.P. Stott and F.C. Brown, Phys. Rev. Lett. 53, 2157 (1984). The cross-over of conduction band edges occurs between x = 0.1 and x = 0.3, depending on temperature. Figure 4 corresponds to a low temperature.
M. Skibowski, G. Sprüssel and V. Saile, in Proceedings of the Fourteenth International Conference on the Physics of Semiconductors, Edinburgh, 1978, edited by B.L.H. Wilson, Institute of Physics, Bristol, 1979, p. 1359.
D.E. Aspnes, C.G. Olson and D.W. Lynch, in Proc. XIII-th Intern. Conf. Phys. Semiconductors (Rome, 1976), edited by F.G. Fumi (North-Holland, Amsterdam, 1976) pp. 1000.
D.E. Aspnes, C.G. Olson and D.W. Lynch, Phys. Rev. B12, 2527 (1975).
D.E. Aspnes, C.G. Olson and D.W. Lynch Phys. Rev B14, 2534, 4450 (1976).
D.E. Aspnes, M. Cardona, V. Saile and G. Sprüssel, Solid State Commun. 31, 99 (1979).
R.E. Allen and J.D. Dow, Phys. Rev. B24, 911 (1981).
D.E. Eastman and J.L. Freeouf, Phys. Rev. Lett. 33, 1601 (1974).
D.E. Eastman and J.L. Freeouf, Phys. Rev. Lett. 34, 1624 (1975).
W. Gudat and D.E. Eastman, J. Vac. Sci Technol. 13, 831 (1976).
D.E. Eastman, T.-C. Chiang, P. Heimann and F.J. Himpsel, Phys. Rev. Lett. 45, 6546 (1980).
S.Y. Ren, J.D. Dow and J. Shen, Phys. Rev. B38, 10677 (1988).
S.Y. Ren and J.D. Dow, J. Appl. Phys. 65, 1987 (1989).
R.-D. Hong, D.W. Jenkins, S.Y. Ren and J.D. Dow, Mater. Res. Soc. Symp. Proc. 11, 545 (1987), in Interfaces, Superlattices, and Thin Films, ed. J.D. Dow and I.K. Schuller.
J.D. Dow, S.Y. Ren and J. Shen, NATO Advanced Science Institutes Series B183: Properties of Impurity States in Superlattice Semiconductors, ed. by C.Y. Fong, LP. Batra and S. Ciraci (Plenum Press, New York, 1988), p. 175.
J.C. Slater and G.F. Koster, Phys. Rev. 94, 1498 (1954).
W.A. Harrison, Electronic Structure and the Properties of Solids, W.H. Freeman, San Francisco, 1980, p. 481.
P. Vogl, H.P. Hjalmarson and J.D. Dow, J. Phys. Chem. Solids 44, 365 (1983).
The electronic structure model employed [27] is an sp 3 s * empirical tight-binding model whose matrix elements exhibit chemical trends depending on atomic energies and bond lengths. The matrix elements were obtained by simultaneously fitting the band structures at the Γ and X points of sixteen semiconductors. In the case of GaAs 1−x P x , the L conduction minima are slightly lower than they should be, especially for x≈ 0.5, where they can lie slightly below the Γ and X minima. Thus the quantitative conclusions of the present work for the band gap and the exciton binding energy have theoretical uncertainties of order 0.2 eV, and the core exciton binding energies are, if anything, underestimated by about this amount. Hence the binding energies we predict are likely to be even larger in Nature.
C. Delerue, M. Lannoo and J.M. Langer, Phys. Rev. Lett. 61, 199 (1988).
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Dow, J.D., Shen, J., Ren, S.Y. (1989). Core Excitons in Strained-Layer Superlattices. In: Doni, E., Girlanda, R., Parravicini, G.P., Quattropani, A. (eds) Progress in Electron Properties of Solids. Physics and Chemistry of Materials with Low-Dimensional Structures, vol 10. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-2419-2_33
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