Abstract
A comparative study of a series of 28 single organometallic precursors to the binary ceramic phases TiC, TiN, VC, VN is reported. The design of the molecules, their thermal behavior, and their use in CVD applications are described. The influence on the film composition of (1) the nature of the precursor ligands (Cp, Cp′, Cl, NR2 with R = Et, SiMe3); and (2) the CVD conditions (hot or cold wall, carrier gas, gas phase composition) is studied in the case of the best candidate precursors.
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Valade, L. et al. (1996). Single-source precursors for the chemical vapor deposition of titanium and vanadium carbide and nitride. In: Oyama, S.T. (eds) The Chemistry of Transition Metal Carbides and Nitrides. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-1565-7_15
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DOI: https://doi.org/10.1007/978-94-009-1565-7_15
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-7199-4
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