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Motivations and Early Demonstrations for In-Situ Processings for III — V Semiconductor Devices

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Emerging Technologies for In Situ Processing

Part of the book series: NATO ASI Series ((NSSE,volume 139))

Abstract

Silicon transistors have evolved into integrating circuits starting from discrete devices over twenty years ago. The similar evolution will occur in compound semiconductor optoelectronic devices, like lasers or photodetectors. The same benefits, high performance and low cost will be also expected by such integration of optoelectronic devices.

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References

  1. YARIV A. “The beginning of integrated optoelectronics circuits” IEEE Trans., 1984 ED-31 (11), pp 1656–1661

    Google Scholar 

  2. HAYASHI I. “Research aiming for future optoelectronic integration” IEE Proceedings, Vol. 133, pt. J. N° 3, June 1986, pp. 237–244

    CAS  Google Scholar 

  3. ASAKAWA K. and SUGATA S. “GaAs and AlGaAs anisotropic fine pattern etching using a new reactive beam etching system” J. Vac. Sci. and Techrol. 1985, B3, pp. 402–405

    Article  Google Scholar 

  4. YUASA T., ASAKAWA K., HANNOH M., SHINOZAKI K. and ISHII H. “Reactive-ion-beam-etched cavity GaAs - AlGaAs multi quantum well lasers” IOOC-EOOC Venice, Italy, Oct. 1985, Tech. Digest, pp. 505–508

    Google Scholar 

  5. TAKADO N., ASAKAWA K., YUASA T., SUGATA S., MIYAUCHI E., HASHIMOTO H. and ISHII M. “Chemically enhanced Forcused Ion Beam Etching of Deep Groove and Laser Mirror Facets in GaAs. under C12 Gas Irradiation Using a Fine Nozzle” Appl. Phys. Lett, to be published

    Google Scholar 

  6. TAKAMORI A., SUGATA S., ASAKAWA K., MIYAUCHI E., HASHIMOTO H. “Cleaning of MBE GaAs Substrates by Hydrogen radical beam Irradiation” Jpn. J. of Appl. Phys. 26 N° 2, L142, 1987

    Article  CAS  Google Scholar 

  7. MIYAUCHI E. and HASHIMOTO H. “Application of FIB technology to maskless ion implantation in an MBE- Grown GaAs or AlGaAs epitaxal layer for three-diinensional pattern doping crystal growth” Vac. Science and Technol. A4 (1986) pp. 933–938

    Article  Google Scholar 

  8. MIYAUCHI E. and HASHIMOTO H. “Maskless Ion Implantation System For 3-dimensional Fine Doping Structures in III-V compound Semiconductors” Nucl. Instrum. Methods, Feb. 1987

    Google Scholar 

  9. TAKAMORI A., MIYAUCH E., ARIMOTO H., BAMBA Y., MORITA T. and HASHIMOTO H. “Growth-interrupted interfaces in multilayer MBE growth of gallium arsenide” Jpn. J. Appl. Phys. 24 (1985) L414-L416

    Article  Google Scholar 

  10. TAKAMORI A., MIYAUCH E., ARIMOTO H., BAMBA Y., MORITA T. and HASHIMOTO H. “Optical properties of pattern-doped GaAs/AlGaAs grown by an MBE system equipped with a focused ion beam implanter” Inst. Phys. Cbnf. Ser. N° 79 (1986) 247–252

    CAS  Google Scholar 

  11. SUGATA S. Private Communication

    Google Scholar 

  12. ISHIDA K., TAKAMORI T., MATSUI K., FUKLJNAGA T., MORITA T., MIYAUCHI E. HASHIMOTO H. and NAKASHIMA H. “Fabrication of Index Guided AlGaAs/GaAs MQW Lasers by Selective Disordering using Be Focused Ion Beam Implantation” Jap. J. of Appl. Phys. Vol. 25, 1986, L728

    Article  Google Scholar 

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© 1988 Martinus Nijhoff Publishers

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Hayashi, I. (1988). Motivations and Early Demonstrations for In-Situ Processings for III — V Semiconductor Devices. In: Ehrlich, D.J., Nguyen, V.T. (eds) Emerging Technologies for In Situ Processing. NATO ASI Series, vol 139. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-1409-4_2

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  • DOI: https://doi.org/10.1007/978-94-009-1409-4_2

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-7130-7

  • Online ISBN: 978-94-009-1409-4

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