Low Energy (300 eV - 10 keV) Ar+ and Cl+ Ion Irradiation of (100) Si
The use of reactive ions to etch Si and Si02 has been shown, under appropriate conditions, to enable anisotropic and selective etching to be obtained . In an etching process where reactive ion etching is used, damage is inevitably produced by high kinetic energy ions impinging on a surface from a plasma . Ion beam etching offers greater control and can be employed to shape features that are unobtainable by other etching techniques; in fact, this process introduces the possibility of controlled isotropic material shaping . However, the radiation damage produced by this process is a serious problem.
KeywordsTotal Disorder Channel Number Figure Continuous Amorphous Layer High Dose Implant
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