Low Energy (300 eV - 10 keV) Ar+ and Cl+ Ion Irradiation of (100) Si

  • S. Kostic
  • D. G. Armour
  • G. Carter
Part of the NATO ASI Series book series (NSSE, volume 155)

Abstract

The use of reactive ions to etch Si and Si02 has been shown, under appropriate conditions, to enable anisotropic and selective etching to be obtained [1]. In an etching process where reactive ion etching is used, damage is inevitably produced by high kinetic energy ions impinging on a surface from a plasma [2]. Ion beam etching offers greater control and can be employed to shape features that are unobtainable by other etching techniques; in fact, this process introduces the possibility of controlled isotropic material shaping [3]. However, the radiation damage produced by this process is a serious problem.

Keywords

Total Disorder Channel Number Figure Continuous Amorphous Layer High Dose Implant 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 1989

Authors and Affiliations

  • S. Kostic
    • 1
  • D. G. Armour
    • 1
  • G. Carter
    • 1
  1. 1.Department of Electronic and Electrical EngineeringUniversity of SalfordSalfordUK

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