Abstract
Ion beam irradiation of silicon has been used extensively in semiconductor technology, but mainly in implantation of dopant atoms (B, As, P etc.). The dopant atoms substitute the silicon atoms in the lattice and change with their extra electron or hole, the electric conductivity of the material. In the bandgap they appear as shallow levels, lying close to the conduction or valence band edges. This technique uses ions in the keV energy region and the penetration depth is at the most a few µm (1).
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© 1989 Kluwer Academic Publishers
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Hallén, A., Håkansson, P., Sundqvist, B.U.R., Tillberg, E. (1989). Fast-Ion-Induced Defects in Silicon Studied by Deep Level Transient Spectroscopy. In: Kelly, R., da Silva, M.F. (eds) Materials Modification by High-fluence Ion Beams. NATO ASI Series, vol 155. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-1267-0_16
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DOI: https://doi.org/10.1007/978-94-009-1267-0_16
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