Computer Simulation of Ion-Beam Mixing of Cobalt on Silicon

Abstract

Many theoretical works deal with recoil mixing of thin or thick Layers on a substrate [1,2,3,4]. These studies were carried out within the assumption of isotropic angular distribution of the moving low-energy cascade atoms. This is true if E ” E_o, where E is the initial energy of the primary ions and E_o amounts to between 10 and 100 eV [5]. In this case one can expect a maximum recoil mixing efficiency at the depth of maximum energy deposition by the primary ions, i.e. where F_E ($E,\vec{\Omega },\vec{r}$) has its maximum [3,5]. There are also many experimental works which assess this suggestion [6,7,8].