X-Ray Stress Measurement of Si3N4 Ceramics
X-ray elastic constants of sintered, hot-pressed and HIP’ed Si3N4 ceramics were determined for various diffraction lines with CrKα radiation. With its result, X-ray stress measuring method was applied to investigate the residual stress distribution in a ground surface layer and the thermal stability of residual stresses. The residual stress was compressive over the entire ground surface layer, and the depth in which the residual stress existed was not greater than 20 μm even in the case of heavy grinding condition. Both macro and micro residual stresses are stable under the temperature less than 1000K.
KeywordsResidual Stress Ground Surface Diffraction Line Compressive Residual Stress Residual Stress Distribution
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