Advertisement

Wafer and Epilayer Improvement Correlated with Device Performances for Inp Based Optoelectronics

  • I. Grant
  • M. Heyen
  • H. Jürgensen
  • D. Schmitz
  • M. Renaud
  • M. Erman
  • J. Le Bris
  • F. Schulte
  • Ch. Steinberger
Conference paper

Abstract

The project described in this paper is aimed to develop a reproducible technology for the preparation of InP substrates and epitaxial layers based on this material. This development is supported by extensive material characterization and the feed back from device manufacturing.

Keywords

Epitaxial Layer Metal Organic Vapor Phase Epitaxy Quaternary Layer Race Project Bandgap Wavelength 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. /1/.
    Erman J., Gillardin G., Le Bris J., Renaud M. and Tomzig E. (1989) ‘Characterization of Fe doped semi - insulating InP by low and room temperature spatially resolved photoluminescence’,Journal of Crystal Growth, 469–482.Google Scholar
  2. /2/.
    Splettstoper J., Schulte F., Trasser A., Schmitz D. and Beneking H. (1989) ‘High speed Ga0.47lnp 53As MISFETs grown by metal organic vapor phase epitaxy’, Proceedings of ESSDERC in Berlin, to be published.Google Scholar

Copyright information

© ECSC, EEC, EAEC, Brussels and Luxembourg 1989

Authors and Affiliations

  • I. Grant
    • 1
  • M. Heyen
    • 2
  • H. Jürgensen
    • 2
  • D. Schmitz
    • 2
  • M. Renaud
    • 3
  • M. Erman
    • 3
  • J. Le Bris
    • 3
  • F. Schulte
    • 4
  • Ch. Steinberger
  1. 1.ICIMilton KeynesUK
  2. 2.AixtronAachenGermany
  3. 3.LEPParisFrance
  4. 4.Technical University AachenAachenGeremany

Personalised recommendations