The use of a sol-gel processed cordierite precursor sinterable about 900 °C allows cosintering of the copper and the ceramic. A strong bonding between the copper film and the cordierite substrate can be achieved through an eutectic bonding technique. Three types of interfaces have been studied by EPMA, ESCA and SEM: (a) cosintered in hydrogen, leading to poor metal adhesion, (b) cosintered in wet argon with slow heating rate (500°C/h) leading to strong copper diffusion, (c) cosintered in wet argon with fast heating rate (800°C/h) leading to the best macroscopic properties, i.e. no deformation, limited diffusion and strong adhesion.
KeywordsDepth Profile Copper Film Slow Heating Rate Microelectronic Packaging Fast Heating Rate
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