Status of Lead Salt Diode Laser Development at Spectra-Physics
Newly developed double heterostructure (DH) lasers prepared by Molecular Beam Epitaxy (MBE) are currently in the process of gradually replacing the traditionally fabricated diffused homostructure lasers. PbTe-PbEuSeTe DH MBE lasers are routinely fabricated at Laser Analytics, Inc. (LAI) with different Eu concentrations. The active layers operate in the short wavelength range of 3–6.5 um. The MBE device structures are lattice matched, and due to their superior electrical and optical confinement have significantly improved device performance. Threshold currents as low as 1 mA (20 A/cm2) at 20K were measured; and the maximum CW operation temperature achieved so far is 175K, which is the highest currently known for ordinary DH devices. A similar effort using the LPE technology was made to develop lattice matched PbSe-PbSnSeTe laser devices. So far lasers operating in the spectral range of 8–20 um have been developed utilizing the LPE technique. High power 10-element laser arrays were fabricated for the first time using Pb salt materials. When operating at 2A injection current, those lasers produced up to 70 mW of power and were stable at 60 mW to better than 0.2% over a period of several minutes.
KeywordsActive Layer Molecular Beam Epitaxy Liquid Phase Epitaxy Reflection High Energy Electron Diffraction Laser Array
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