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Point Defect Structure of Chromium (III) Oxide

  • Ming-Yih Su
  • George Simkovich
Part of the NATO ASI Series book series (ASIC, volume 276)

Abstract

Based upon studies of the electrical conductivity and Seebeck coefficient of TiO2- and MgO-doped Cr2O3, the point defect structure of Cr2O3 was determined. It is found that the defect and transport properties in Cr2O3 are complicated. At high temperatures, different defects may be present depending upon the oxygen partial pressure. In general, at high PO2, Cr2O3 is a p-type semiconductor with electron holes and chromium vacancies as the dominant defects; at intermediate PO2, it behaves as an intrinsic semiconductor with electrons and electron holes dominant; and at low PO2, near the Cr/Cr2O3 equilibrium oxygen pressure, it changes to an n-type semiconductor with electrons and chromium interstitials dominant. The equilibrium constants associated with the formation of different defects are also obtained.

Keywords

Defect Structure Oxygen Partial Pressure Seebeck Coefficient Dopant Content Electron Hole 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 1989

Authors and Affiliations

  • Ming-Yih Su
    • 1
  • George Simkovich
    • 1
  1. 1.The Metals Science and Engineering Program, Materials Science and Engineering DepartmentThe Pennsylvania State UniversityUniversity ParkUSA

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