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Defect Structure and Self Diffusion in Mg2SiO4 (Forsterite) at High Temperature

  • K. Andersson
  • G. Borchardt
Part of the NATO ASI Series book series (ASIC, volume 276)

Abstract

For the explanation of creep behaviour and solid state reactions in crystalline silicates exact values of the atomic mobilities of the constituent elements are of major importance. The use of Neutral Primary Beam Secondary Ion Mass Spectrometry (NPB-SIMS) makes it possible to analyse the isotopic concentration profiles of all constituent elements in Mg2SiO4 simultaneously. The results indicate that DSi ≪ DO ≪ DMg. This can be used as a basis for model calculations by both earth scientists and materials scientists.

Keywords

Constituent Element Tracer Diffusion Vacancy Mechanism Silicon Isotope Vacancy Versus 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 1989

Authors and Affiliations

  • K. Andersson
    • 1
  • G. Borchardt
    • 1
  1. 1.FB Metallurgie und WerkstoffwissenschaftenTechnische Universität ClausthalClausthal-ZellerfeldGermany

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