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Diagnostic Techniques

  • Chapter
Microelectronic Materials and Processes

Part of the book series: NATO ASI Series ((NSSE,volume 164))

Abstract

During integrated circuit (IC) fabrication, silicon wafers are exposed to a large number of individual well-defined process steps (up to 200), which together constitute the “fabrication process”. In the fabrication process only a few key steps, generally between about 20 and 50, have a direct effect on the performance characteristic of the finished electrical device or circuit. Since the final yield (number of chips per wafer that have passed the final quality control) depends on the yield of the individual processes, it is advantageous to have diagnostic (analytical) techniques for these key steps to ensure that a crucial “fault” in one process is not carried through to succeeding steps. The increasing importance of analytical techniques applied to silicon technology is evident from the large number of publications on this subject that have appeared in recent years (Fig. 1).

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  1. Philips Research Laboratories, Eindhoven, The Netherlands

    H. W. Werner

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  1. AT & T Bell Laboratories, Murray Hill, New Jersey, USA

    R. A. Levy

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Werner, H.W. (1989). Diagnostic Techniques. In: Levy, R.A. (eds) Microelectronic Materials and Processes. NATO ASI Series, vol 164. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0917-5_16

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