Dry Etching Processes

  • D. W. Hess
Chapter
Part of the NATO ASI Series book series (NSSE, volume 164)

Abstract

The increase in complexity and the decrease in cost of solid state devices and integrated circuits over the past twenty-five years has been phenomenal. In large part, these trends have been made possible by a continual reduction in the minimum feature size of individual circuit elements. Currently available exposure tools and highly sensitive resist materials allow the generation of submicron pattern sizes. However, reproducible and controllable transfer (etching) of pattern in the 1 μm range is difficult if not impossible using conventional liquid etching. As a result, considerable interest in “dry” etching techniques has developed. Specifically, plasma assisted etch processes are attractive because of their unique capabilities. In the following, the properties of rf glow discharges (plasmas) are described as they relate to thin film etching [1]. Materials commonly used in integrated circuits (IC) fabrication are treated individually. Process considerations such as etch profiles, process monotoring, and safety aspects are discussed.

Keywords

Glow Discharge Etch Rate Plasma Etching Very Large Scale Integration Plasma Potential 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 1989

Authors and Affiliations

  • D. W. Hess
    • 1
  1. 1.Department of Chemical EngineeringUniversity of CaliforniaBerkeleyUSA

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