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Heteroepitaxy Of Semiconductor/Fluoride/Si Structures

  • Tanemasa Asano
  • Hiroshi Ishiwara
  • Seijiro Furukawa
Part of the NATO ASI Series book series (NSSE, volume 160)

Abstract

Heteroepitaxial growth of alkaline earth fluoride films on Si substrates and Si, Ge, and GaAs films on the fluoride/Si structures, is reviewed. Growth of single crystalline fluoride films on Si and CaF2/Si interface characteristics are first discussed. Then the usefulness of novel heteroepitaxial technologies, the thin amorphous layer predeposition method and the electron beam irradiation method, is demonstrated in the growth of semiconductor films on fluoride layers. Finally, use of vicinal (100) substrates in conjunction with rapid thermal annealing treatments is shown to be effective in growing high quality GaAs(100) films on fluoride layers.

Keywords

Rapid Thermal Annealing Electron Beam Irradiation Semiconductor Film GaAs Film Solid Phase Epitaxy 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 1989

Authors and Affiliations

  • Tanemasa Asano
    • 1
  • Hiroshi Ishiwara
    • 1
  • Seijiro Furukawa
    • 1
  1. 1.Graduate School of Science and EngineeringTokyo Institute of TechnologyMidoriku, YokohamaJapan

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