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Heterostructures on Silicon: One Step Further with Silicon pp 303–309Cite as

Complete Experimental and Theoretical Analysis of Electrical Transport of S.O.S. Films: The Particularity of Heavily Doped Samples

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Part of the book series: NATO ASI Series ((NSSE,volume 160))

Abstract

The silicon On Insulator (SOI) techniques are now considered as very promising for rapid VLSI Electronics. Indeed SOI allows: (a) high density of elementary devices in I.C. (b) high tolerance to ionizing radiations (α particles for example) (c) a drastic reduction of parasitic capacitances (increase of I.C. speed and decrease of power dissipation) (d) absence of latch-up.

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Author information

Authors and Affiliations

  1. LPCS-ENSERG, 23, Rue des Martyrs, 38031, Grenoble Cedex, France

    G. Kamarinos & G. Ghibaudo

  2. CEN-“Democritos”, Aghia Paraskevi, Athens, Greece

    D. Tsamakis, C. Papatriantafillou & E. Rokofillou

Authors
  1. G. Kamarinos
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  2. G. Ghibaudo
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  3. D. Tsamakis
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  4. C. Papatriantafillou
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  5. E. Rokofillou
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Editor information

Editors and Affiliations

  1. Physics of Materials and Microstructures Division, Bagneux Laboratory, C.N.E.T., Bagneux, France

    Yves I. Nissim

  2. Physics Division, Central Research Laboratory, Thomson CSF, Orsay, France

    Emmanuel Rosencher

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© 1989 Kluwer Academic Publishers

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Kamarinos, G., Ghibaudo, G., Tsamakis, D., Papatriantafillou, C., Rokofillou, E. (1989). Complete Experimental and Theoretical Analysis of Electrical Transport of S.O.S. Films: The Particularity of Heavily Doped Samples. In: Nissim, Y.I., Rosencher, E. (eds) Heterostructures on Silicon: One Step Further with Silicon. NATO ASI Series, vol 160. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0913-7_33

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  • DOI: https://doi.org/10.1007/978-94-009-0913-7_33

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-94-010-6900-7

  • Online ISBN: 978-94-009-0913-7

  • eBook Packages: Springer Book Archive

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