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Structural Study of CoSi2/Si (001) and (111)

  • C. W. T. Bulle-Lieuwma
  • A. H. Van Ommen
  • L. J. Van Ijzendoorn
Part of the NATO ASI Series book series (NSSE, volume 160)

Abstract

Nucleation and growth of CoSi2 films by thermal reaction of vapour deposited Co on (001) and (111) Si have been studied by transmission electron microscopy (TEM). On (001) Si, CoSi2 occurs in a number of orientations including the aligned (001) orientation. On (111) Si single crystalline layers are obtained, which are twin-oriented. In addition Si/CoSi2/Si structures have been formed by high-dose implantation of Co into (001) and (111) Si and subsequent annealing. In this way single crystalline ‘mesotaxial’ CoSi2 layers are obtained which are fully aligned with the Si-matrix. Epitaxial growth of CoSi2 on Si by conventional techniques (evaporation) and by high energy Co implantation is discussed.

Keywords

High Resolution Transmission Electron Microscopy Burger Vector Epitaxial Growth Misfit Dislocation Step Height 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 1989

Authors and Affiliations

  • C. W. T. Bulle-Lieuwma
    • 1
  • A. H. Van Ommen
    • 1
  • L. J. Van Ijzendoorn
    • 1
  1. 1.Philips Research LaboratoriesEindhovenThe Netherlands

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