Advertisement

Progress in Epitaxial Insulators and Metals on Silicon

  • Julia M. Phillips
Part of the NATO ASI Series book series (NSSE, volume 160)

Abstract

Research into the growth of epitaxial insulators and metals on silicon has been a fertile area of investigation for several years.1 The various groups pursuing this line of research have given numerous motivations for this work, such as its possible applicability to 3-dimensional integration, new device structures, dielectric isolation and semiconductor passivation (in the case of epitaxial insulators), and superior device metallization (in the case of epitaxial metals). From a more fundamental standpoint, these materials also offer, by virtue of their high degree of structural perfection, the opportunity to study the relationships between the atomic structure and electrical properties of both the film itself and of its interface with the substrate. There has been progress in studying the applicability of new epitaxial materials to all of these areas. In this paper some specific examples of investigations in the areas listed above will be discussed.

Keywords

Rapid Thermal Anneal Interface State Density Epitaxial Material Epitaxial Interface Epitaxial Quality 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    See Bean JC(ed): Proceedings of the First International Symposium on Silicon Molecular Beam Epitaxy. Pennington, NJ: Electrochemical Society, 1985. Also see Bean JC and Schowalter LJ(eds): Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy. Pennington, NJ: Electrochemical Society, 1988.Google Scholar
  2. 2.
    Ishizaka A, Nakagawa K, and Shiraki Y: Collected Papers of MBE-CST-2: Tokyo: Jpn. Soc. Appl. Phys., 1982, p. 182.Google Scholar
  3. 3.
    Asano T and Ishiwara H: Thin Solid Films 93, 143, 1982.ADSCrossRefGoogle Scholar
  4. 4.
    Asano T, Ishiwara H, and ICaifu N: Jpn. J. Appl. Phys. 22, 1476, 1983.ADSGoogle Scholar
  5. 5.
    Phillips JM, Batstone JL, Hensel JC, and Cerullo M: Appl. Phys. Lett. 51, 1895, 1987.ADSCrossRefGoogle Scholar
  6. 6.
    AG He at pulse 210, AG Associates, Inc., Palo Alto, CA 94303.Google Scholar
  7. 7.
    Cerullo M, Phillips JM, Anzlowar M, Pfeiffer L, Batstone JL, and Galiano M: Mat. Res. Soc. Symp. Proc., in press.Google Scholar
  8. 8.
    Smith TP, III, Phillips JM, Augustyniak WM, and Stiles PJ: Appl. Phys. Lett. 45, 907, 1984.ADSCrossRefGoogle Scholar
  9. 9.
    People R, Smith TP, Phillips JM, Augustyniak WM, and Wecht KW: Mat. Res. Soc. Symp. Proc. 37, 169, 1985.Google Scholar
  10. 10.
    Smith TP, III, Phillips JM, People R, Gibson JM, Pfeiffer L, and Stiles PJ: Mat. Res. Soc. Symp. Proc. 54, 295, 1986.CrossRefGoogle Scholar
  11. 11.
    Schowalter LJ, Fathauer RW, and Krusius JP: Proc. Symp. on Silicon Molecular Beam Epitaxy: Bean JC(ed): Pennington, NJ: The Electrochemical Society, 1985, p. 311.Google Scholar
  12. 12.
    Pfeiffer L, Phillips JM, Smith TP, III, Augustyniak WM, and West KW: Appl. Phys. Lett. 46, 947, 1985.ADSCrossRefGoogle Scholar
  13. 13.
    Phillips JM, Pfeiffer L, Joy DC, Smith TP, Gibson JM, Augustyniak WM, and West KW: J. Electrochem. Soc. 133, 224, 1986.CrossRefGoogle Scholar
  14. 14.
    Phillips JM and Augustyniak WM: Appl. Phys. Lett. 48, 463, 1986.ADSCrossRefGoogle Scholar
  15. 15.
    Pfeiffer L, Phillips JM, Luther ICE, West KW, Batstone JL, Stevie FA, and Maurits, JEA: Appl. Phys. Lett. 50, 466, 1987.ADSCrossRefGoogle Scholar
  16. 16.
    Phillips JM, Manger ML, Pfeiffer L, Joy DC, Smith TP, III, Augustyniak WM, and West KW: Mat. Res. Soc. Symp. Proc. 53, 155, 1986.Google Scholar
  17. 17.
    Batstone JL, Phillips JM, and Hunke EC: Phys. Rev. Lett. 60, 1394, 1988.ADSCrossRefGoogle Scholar
  18. 18.
    Phillips JM, Batstone JL, Hensel JC, and Cerullo M: Appl. Phys. Lett. 51, 1895, 1987.ADSCrossRefGoogle Scholar
  19. 19.
    Phillips JM, Batstone JL, Hensel JC, Cerullo M, and Unterwald FC: submitted to J. Mat. Res.Google Scholar
  20. 20.
    Tesanović Z, Jarić MV, and Maekawa S: Phys. Rev. Lett. 57, 2760, 1986; N. Trivedi and N. W. Asheroft: unpublished and private communication.Google Scholar
  21. 21.
    Levi AFJ, Tung RT, Batstone JL, and Anzlowar M: Mat. Res. Soc. Symp. Proc., in press.Google Scholar

Copyright information

© Kluwer Academic Publishers 1989

Authors and Affiliations

  • Julia M. Phillips
    • 1
  1. 1.AT&T Bell LaboratoriesMurray HillUSA

Personalised recommendations