Epitaxy of GaAs on Patterned Si Substrates by MBE

  • M. N. Charasse
  • B. Bartenlian
  • J. P. Hirtz
  • A. Peugnet
  • J. Chazelas
  • H. Blank
Part of the NATO ASI Series book series (NSSE, volume 160)

Abstract

In recent years a great deal of activity has taken place to obtain good quality GaAs on Si. Two main reasons have motivated this work. The first-one is the Si substrate which is larger, mechanically stronger, with a better thermal conductivity and less expensive than GaAs. The second-one is the possibility of integration of high speed or optical GaAs devices to the standard Si integrated circuit technology. Another possibility which has been emerging very recently is the fabrication of devices consisting of layers in Si and layers in GaAs. A GaAs-Si heterojunction bipolar transistor has already been proposed /l/. The growth of GaAs on patterned Si substrates is essential for these two last applications. As the Si processes are made at a higher temperature than the GaAs-ones, they have to be made first. Afterwards the Si devices are covered with a pattern made of Sio2 or Si3N4 before growing the GaAs layers in the unmasked areas. Then after a lift off, GaAs and Si devices are found close together and can be interconnected.

Keywords

Selective Growth Good Thermal Conductivity Thermal Expansion Coef Intense Background Discontinuous Ring 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 1989

Authors and Affiliations

  • M. N. Charasse
    • 1
  • B. Bartenlian
    • 1
  • J. P. Hirtz
    • 1
  • A. Peugnet
    • 1
  • J. Chazelas
    • 1
  • H. Blank
    • 2
  1. 1.THOMSON-CSF - Domaine de CorbevilleOrsayFrance
  2. 2.THOMSON THM/DAGOrsayFrance

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