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Dopant Segregation and Incorporation in Molecular Beam Epitaxy

  • S. Andrieu
  • F. Arnaud d’Avitaya
  • J. C. Pfister
Part of the NATO ASI Series book series (NSSE, volume 160)

Abstract

In Molecular Beam Epitaxy (MBE), doping is performed by coevaporation of the semiconductor material(s) and the dopant, opening and shutting the dopant shutter source. Since the growth temperature is quite low (typically 500°C for GaAs and 700°C for Si), the lack of bulk diffusion should lead to abrupt profiles. However, a smearing of the profile as well as a dopant surface enrichment is observed for many dopants both in Si (Sb1–9,Ga7,8,10, In11–13, As14,15) and GaAs (Sn16,17,34,35, Mg33,18, Mn18). Moreover, incomplete incorporation of the incident dopant flux is reported for dopants where desorption is significant (Mg in GaAs33 and In13, Sb6, Ga8, in Si).

Keywords

Spectroscopic Ellipsometry Dopant Atom Doping Profile Surface Enrichment Segregation Phenomenon 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 1989

Authors and Affiliations

  • S. Andrieu
    • 1
  • F. Arnaud d’Avitaya
    • 2
  • J. C. Pfister
    • 2
  1. 1.I.S.A. RiberRueil-MalmaisonFrance
  2. 2.Centre National d’Etudes des TelecommunicationsMeylanFrance

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