Abstract
SiGe/Si superlattices are a promising material for a silicon based integration of conventional integrated circuits with heterojunction devices. Si and Ge are lattice mismatched by 4.2%. This paper describes conditions for stable superlattice growth and explains methods for strain adjustment in the superlattice. Devices are described and essential results given. Ultrathin superlattices and their potential for observation of zone folding effects are mentioned.
Keywords
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
R People and JC Bean: Appl. Phys. Lett. 47, 322 (1985), Erratum: Appl. Phys. Lett. 49, 229 (1986)
E Kasper: Surf. Sei. 174, 630 (1986)
JY Tsao, BW Dodson, ST Picraux and DM Cornelison: Phys. Rev. Lett. 59, 2455 (1987)
E Kasper, H-J Herzog and H Kibbel: Appl. Phys. 8, 199 (1975)
JC Bean, LC Feldman, AT Fiory, S Nakahara and IK Robinson: J. Vac. Sei. Technol. A2, 436 (1984)
TP Pearsall, J Bevk, LC Feldman, JM Bonar and JP Mannaerts: Phys. Rev. Lett. 58, 729 (1987)
E Kasper, H-J Herzog, H Dämbkes and G Abstreiter: Mat. Res. Soc. Proc. Vol. 56, ed. by JM Gibson, GC Osbourne and RM Tromp: p. 347, Mat. Res. Soc., Pittsburgh (1986)
E Kasper, H-J Herzog, H Jorke and G Abstreiter: Superlattices and Microstructures 3, 141 (1987)
G Abstreiter, H Brugger, T Wolf, H Jorke and H-J Herzog: Phys. Rev. Lett. 54, 2441 (1985)
E Kasper, H Kibbel, H Jorke, H Brugger, E Frieß and G Abstreiter: to be published
S Luryi, A Kastalsky and JC Bean: IEEE Trans. ED-31, 1135 (1984)
TP Pearsall, JC Bean, R People and AT Fiory: Proc. 1st Int. Symp. Si-MBE, ed. by JC Bean: Electrochem. Soc. Proc. Vol. 85–7, Pennington, N.J. (1985), p. 400 and TP Pearsall and JC Bean: Appl. Phys. Lett. 48, 538 (1986)
H Dämbkes, H-J Herzog, H Jorke, H Kibbel and E Kasper: IEEE Trans. ED-33, 633 (1986)
H Temkin, TP Pearsall, JC Bean, RA Logan and S Luryi: Appl. Phys. Lett. 48, 963 (1986) and S Luryi, TP Pearsall, H Temkin and JC Bean: IEEE EDL-7, 104 (1986)
TP Pearsall, H Temkin, JC Bean and S Luryi: IEEE EDL-7, 330 (1986)
SS Iyer, GL Patton, SL Delage, S Tiwari and JMC Stork: Proc. 2nd Int. Symp. Si-MBE, ed. by JC Bean and L Schowalter: Electrochem. Soc., Pennington, N.J. (1988), p. 114 and S.S. Iyer: IEEE Trans. MTT (1988)
H. Dämbkes: same Proc. as /16/, p. 15
T Tatsumi, H Hirayama and N Aizaki: Appl. Phys. Lett. 52, 895 (1988)
HC Liu, D Landheer, M Buchanan and DC Houghton, to be published
J-F Luy, H Jorke, A Casel and E Kasper: results presented at ITG Diskussionssitzung “Heterostruktur-Bauelemente”, Bad Soden, April 88, will be published
S Luryi and SM Sze, Possible Device Application of Si-MBE, in Si-MBE, ed by E Kasper and JC Bean: CRC Press, Boca Raton (USA), 1988
R People: Phys. Rev. B32, 1405 (1985)
E Kasper and H Dämbkes: Inst. Phys. Conf. Ser. No. 82, 93 (1987)
H Jorke: to be published
J-F Luy: IEEE Trans. ED-34, 1084 (1987)
J Büchler, E Kasper, J-F Luy, P Russer and K Strohm: submitted IEEE Trans. MTT — Dec. 88
VP Kesan, DP Neikirk, BG Streetman and PA Blakey: IEEE EDL-8, 129 (1987)
M Kelly: 4th Workshop MTT-Chapter, IEEE (West German Section), Sept. 29th, 1987
H Krömer: Proc. IEEE 70, 12 (1982)
C Smith and AD Welbourne: Proc. IEEE Bipolar Circ. and Techn. Meeting, Minneapolis (1987)
E Kasper, H-J Herzog and K Wörner: J. Crystal Growth 81, 458 (1987)
P Narozny, M Hamacher, H Dämbkes, H Kibbel and E Kasper: will be published
E Kasper: Silicon Germanium-Heterostructures on Silicon Substrates: in Advances in Solid State Physics, Vol. 27, p. 265, ed. by P Grosse, Vieweg, Braunschweig, 1987
U Gnutzmann and K Clausecker: Appl. Phys. 3, 9 (1974)
S Froyen, DM Wood and A Zunger: Phys. Rev. B36, 4547 (1987)
I. Morrison and M Jaros: to be published
TP Pearsall, J Berk, LC Feldman, JM Bonar, JP Mannaerts and Durmazd: Phys. Rev. Lett. 58, 729 (1987)
R Zachai, E Frieß, G Abstreiter, E Kasper and H Kibbel: to be published
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1989 Kluwer Academic Publishers
About this chapter
Cite this chapter
Kasper, E. (1989). SiGe/Si Superlattices: Strain Influence and Devices. In: Nissim, Y.I., Rosencher, E. (eds) Heterostructures on Silicon: One Step Further with Silicon. NATO ASI Series, vol 160. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0913-7_13
Download citation
DOI: https://doi.org/10.1007/978-94-009-0913-7_13
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-6900-7
Online ISBN: 978-94-009-0913-7
eBook Packages: Springer Book Archive