Heteroepitaxial Growth of (Al)GaAs on InP by MOVPE
There is currently a great interest in the heteroepitaxial, growth of GaAs on Si, although other lattice mismatched material combinations are also investigated (e. g. InP on GaAs or Si, GaAs on InP). In this paper, results will be presented on the heteroepitaxial growth of (Al)GaAs on InP. This is a very promising combination for the realisation of high efficiency tandem solar cells, where a AlGaAs cell (1.9 eV) is grown on a InGaAsP cell (1.1 eV) lattice matched to InP. A second important application is the fabrication of optoelectronic integrated circuits, namely the integration of GaAs electronic circuits with InP long wavelength optoelectronic devices.
KeywordsSolar Cell High Dislocation Density Schottky Contact Nucleation Layer Heteroepitaxial Growth
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