Heteroepitaxial Growth of (Al)GaAs on InP by MOVPE

  • A. Ackaert
  • P. Demeester
  • I. Moerman
  • R. Baets
Part of the NATO ASI Series book series (NSSE, volume 160)

Abstract

There is currently a great interest in the heteroepitaxial, growth of GaAs on Si, although other lattice mismatched material combinations are also investigated (e. g. InP on GaAs or Si, GaAs on InP). In this paper, results will be presented on the heteroepitaxial growth of (Al)GaAs on InP. This is a very promising combination for the realisation of high efficiency tandem solar cells, where a AlGaAs cell (1.9 eV) is grown on a InGaAsP cell (1.1 eV) lattice matched to InP. A second important application is the fabrication of optoelectronic integrated circuits, namely the integration of GaAs electronic circuits with InP long wavelength optoelectronic devices.

Keywords

Solar Cell High Dislocation Density Schottky Contact Nucleation Layer Heteroepitaxial Growth 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    M. Pazeghi et al; Low pressure metallo-organic chemical vapor deposition of GaInAsP alloys, Semicon. and Semimetals, 22 (1985), pp 299–378.Google Scholar
  2. 2.
    A. Suzuki et al; Long wavelength PINFET receiver OEIC on a GaAs on InP heter(Structure, Electronic Letters 23 (18), 1987, pp 954–955.CrossRefGoogle Scholar
  3. 3.
    K. Kasahara et al; MBE growth and charaterization of n-GaAs on InP substrates and its device application, Inst. Phys. Conf. Ser. No. 91, 1987, pp 195–198.Google Scholar

Copyright information

© Kluwer Academic Publishers 1989

Authors and Affiliations

  • A. Ackaert
    • 1
  • P. Demeester
    • 1
  • I. Moerman
    • 1
  • R. Baets
    • 1
  1. 1.University of Gent, (L.E.A.-IMEC)GentBelgium

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