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Schottky Barrier Heights and the Continuum of Gap States

  • J. Tersoff
Part of the Perspectives in Condensed Matter Physics book series (PCMP, volume 4)

Abstract

Simple physical considerations of local charge neutrality suggest that near a metal-semiconductor interface, the Fermi level in the semiconductor is pinned near an effective gap center, which is simply related to the bulk semiconductor band structure. In this way “canonical” Schottky barrier heights are calculated for several semiconductors. These are in excellent agreement with experiment for interfaces with a variety of metals.

Keywords

Barrier Height Decay Length Schottky Barrier Height Physical Review Letter Epitaxial Interface 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Editorial Jaca Book spa, Milano 1990

Authors and Affiliations

  • J. Tersoff
    • 1
  1. 1.AT&T Bell LaboratoriesNew JerseyUSA

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