Abstract
Continuous and planar single-crystal NiSi2films (<60 Å thick) have been grown on Si(100) and (111) by ultrahigh-vacuum techniques. Nickel deposition (<20 Å) on atomically clean Si at room temperature, followed by low-temperature heating at ~450°C, results in the growth of epitaxial NiSi2 films whose structure depends critically on the starting Ni thickness. The films are coherent, without misfit dislocations. The orientation of the (111) silicide can be controlled by the initial Ni thickness.
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Tung, R.T., Gibson, J.M., Poate, J.M. (1990). Formation of Ultrathin Single-Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Structures. In: Mönch, W. (eds) Electronic Structure of Metal-Semiconductor Contacts. Perspectives in Condensed Matter Physics, vol 4. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0657-0_20
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DOI: https://doi.org/10.1007/978-94-009-0657-0_20
Publisher Name: Springer, Dordrecht
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