Abstract
The transistor industry is vast, in its manufacturing aspect, in the wide use of its products, and in the research it generates both applied and fundamental. In universities most of this work is done in physics and electrical engineering departments and little of its mathematical requirements have been taken up by math faculty. Yet there has been extensive work on modeling, analysis and computer algorithms, and there remain many open and significant problems. In this talk I shall describe some of the modeling, give a brief introduction to the equations governing current flow in a device, review some of the analytic and numerical approaches to the solution of these equations, and refer to some specialized problems where analysis is useful.1 In so doing I hope to pique the curiosity of some of my audience into taking a longer look at the rich phenomena in this field.
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© 1990 B. G. Teubner Stuttgart and Kluwer Academic Publishers
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Cumberbatch, E. (1990). Modeling for Field-Effect Transistors. In: Manley, J., McKee, S., Owens, D. (eds) Proceedings of the Third European Conference on Mathematics in Industry. European Consortium for Mathematics in Industry, vol 5. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0629-7_2
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DOI: https://doi.org/10.1007/978-94-009-0629-7_2
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