Oxygen-Carbon, Oxygen-Nitrogen and Oxygen-Dimer Defects in Silicon

  • C. P. Ewels
  • R. Jones
  • S. Öberg
Part of the NATO ASI Series book series (ASHT, volume 17)


An ab initio local density functional cluster method, AIMPRO, is used to examine a variety of oxygen related point defects in silicon. In particular results are given for X-O n complexes where X is interstitial C, N or O. For n = 2, the first defect, C-O2 has been assigned to the P-centre giving a PL line at 0.767 eV and seen in Cz-Si annealed around 450°C. The second, N-O2, has properties consistent with a nitrogen related shallow thermal donor. We have also found that a (C-H)02i defect has very similar electronic properties, and this implies that shallow thermal donors do not have a unique composition. The structure and migration energy of the oxygen dimer is considered and the dimer is found to migrate very much faster than a single oxygen atom.


Shallow Donor Thermal Donor Bond Centre Interstitial Carbon Local Vibrational Mode 
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Copyright information

© Kluwer Academic Publishers 1996

Authors and Affiliations

  • C. P. Ewels
    • 1
  • R. Jones
    • 1
  • S. Öberg
    • 2
  1. 1.Department of PhysicsUniversity of ExeterExeterUK
  2. 2.Department of MathematicsUniversity of LuleåLuleåSweden

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