Magnetic Resonance of Heat Treatment Centres in Silicon

  • J. M. Spaeth
Part of the NATO ASI Series book series (ASHT, volume 17)


Silicon crystals grown in quartz crucibles with the Czochralsky (Cz)-method contain a large concentration of interstitial oxygen (1018cm−3). Upon annealing at a temperature of 450–460 °C “shallow” electrically active defects are formed which are often called “thermal donors”. Although their existence has been known for a long time [1,2], there is not yet a clear picture about their microscopic structures. These “heat treatment centres” have been investigated with numerous experimental methods, amongst those also with magnetic resonance techniques being the most important structure sensitive tools.


Electron Paramagnetic Resonance Electron Paramagnetic Resonance Spectrum Quadrupole Interaction Electron Paramagnetic Resonance Line ENDOR Spectrum 
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Copyright information

© Kluwer Academic Publishers 1996

Authors and Affiliations

  • J. M. Spaeth
    • 1
  1. 1.Fachbereich PhysikUniversität-GH PaderbornPaderbornGermany

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