Abstract
Silicon crystals grown in quartz crucibles with the Czochralsky (Cz)-method contain a large concentration of interstitial oxygen (1018cm−3). Upon annealing at a temperature of 450–460 °C “shallow” electrically active defects are formed which are often called “thermal donors”. Although their existence has been known for a long time [1,2], there is not yet a clear picture about their microscopic structures. These “heat treatment centres” have been investigated with numerous experimental methods, amongst those also with magnetic resonance techniques being the most important structure sensitive tools.
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References
Fuller, C.S., Ditzenberger, J.A., Hannay. N.B., and Buehler, E. (1954) Phys. Rev. 96, 833
Kaiser, W., Frisch, H.L., and Reiss. M. (1958) Phys. Rev. B38, 1546
Wagner, P. and Hage, J. (1989) Appl. Phys. A49, 123
Pajot, B., Compain, H., Lerouille. J. and Clerjaud, B. (1983) Physica B+C 117–118 B, 119
Götz, W., Pensl, G. and Zulehner, W. (1992) Phys. Rev. B46, 4312
Muller, H.S., Sprenger.Sieverts. E.G., and .Ammerlaan. C.A.J. (1978) Solid State Comm. 25, 987
Lathusko, A.I., Makarenko, L.F., Markevich, V.P.. and Murin, L.I. (1986) Phys. Status Solidi K181, 93
Gregorkiewicz, T., Bekmann, H.H.B.Th., and Ammerlaan, C.A.J. (1988) Phys. Rev. B38, 3998
Bekmann, H.H.B.Th., Gregorkiewicz. T. and Ammerlaan. C.A.J. (1988) Phys. Rev. Lett. 61, 227
Michel, J. (1987) Die Struktur der thennischen Donatoren in Silizium, Dissertation, Paderborn
Michel, J., Niklas, J.R. and Spaeth, J.-M. (1989) Phys. Rev. B40, 1732
Meilwes, N., Spaeth. J.-M., Emtsev. V.V. and Oganesyan, G.A. (1994) Semicond. Sci. and Technol. 9, 1346
Spaeth, J.-M., Niklas, J.R. and Bartram. R.H. (1992) Structural Analysis of Point Defects in Solids, Chapt. 5 and 8 (Springer, Heidelberg. New York)
Stich, B., Greulich-Weber, S. and Spaeth. J.-M. (1995) J. Appl. Phys. 77, 1546
Meilwes, N. (1993) Strukturuntersuchungen an thermisch gebildeten Sauerstoffaggregatzentren in Silizium, Dissertation Paderborn
Michel, J., Meilwes N.. Spaeth, J.-M. (1989) Phys. Rev. B39, 7978
Meilwes. Spaeth. J.-M., Götz, W. and Pensl, G. (1994) Semicond. Sci. and Technol. 9, 1623
Mathiot, D. (1987) Appl. Phys. Lett. 51. 904
Ourmazd. A., Schroter, W. and Bourret. A. (1984) J. Appl. Phys. 56, 1670
Stavola, M. and Snyder. L.C. (1983) in Defects in Silicon, ed. by W.M. Bullis and C.C. Kimmerling (Electrochemical Soc.. Pennington, N.J.)
Dėak, P., Snyder, L.C. and Corbett. J.W. (1992) Phys. Rev. B20, 11612
Götz. W.. Pensl. G., Zulehner, W., Addinall, R. and Newman, R.C. (1994) Solid State Comm. 93, 5, 454 1995
Götz, W., Pensl. G., Zulelmer. W. (1993) Mater. Sci. Forum 117–118, 213
McQuaid, S.A., Louders, C.A., Binns. M.J.. Newman. R.C. and Tacker, J.H. (1994) Mater. Sci. Forum 143–147, 963
Meilwes, N., Spaeth, J.-M., Emtsev, V.V.. Oganesyan. G.A. Götz, W. and Pensl, G. (1994) Mater. Sci. Forum 143–147, 141
Meilwes, N., Niklas. J.R. and Spaeth, J.-M. (1990) Mater. Sci. Forum 65–66, 247
Suezawa, M„ Sumino, K. and Iwaizumi, M. (1983) J. Appl. Phys. 54, 6594
Watkins, G.D. and Corbett, J.W. (1961) Phys. Rev. 121, 1001
Pensl. G. Private communication
Stich, B., Greulich-Weber, S. and Spaeth, J.-M. (1996) Appl. Phys. Lett. 68
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Spaeth, J.M. (1996). Magnetic Resonance of Heat Treatment Centres in Silicon. In: Jones, R. (eds) Early Stages of Oxygen Precipitation in Silicon. NATO ASI Series, vol 17. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0355-5_5
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DOI: https://doi.org/10.1007/978-94-009-0355-5_5
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