On the Impact of Grown-in Silicon Oxide Precipitate Nuclei on Silicon Gate Oxide Integrity
Small point defect clusters grown-in during Czochralski (Cz) crystal pulling can have an important impact on gate oxide integrity (GOI) for present day high quality silicon substrates. A pronounced effect of the crystal pulling conditions on GOI is indeed observed for gate oxide thicknesses between 10 and 100 nm as was already reported more than 20 years ago . Beginning of the 1980’s the link with microdefects grown-in in the silicon substrate was already made [2,3] but it was only the last five years that this correlation has been studied extensively [e.g. 4–9]. Due to the low density and small size of these grown-in defects, few techniques are available to study their nature which is therefore not yet well understood. Recently, powerful tools based on light scattering using visible , near  and mid infra red  light have become available and allow to reveal the minute lattice defects present in as-grown silicon substrates.
KeywordsDefect Density Wafer Surface Gate Oxide Increase Cool Rate Gate Oxide Thickness
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