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Uniform Stress Effect on Nucleation of Oxygen Precipitates in Czochralski Grown Silicon

  • A. Misiuk
Part of the NATO ASI Series book series (ASHT, volume 17)

Abstract

Precipitation of oxygen in Czochralski grown silicon, Cz-Si, at higher temperatures is concomitant with stress [1,2]. This follows mostly from the difference in volume between the clustered (precipitated) oxygen atoms and that of the Si atoms originally present in the same region of the lattice. Stress-related effects in Cz-Si are present even at the earliest stages of clustering, that is at the “thermal donor, TD, temperature range” (TDs exert a compressive stress on the surrounding Si lattice [3]). The same takes place in the case of new donors, NDs, and of nucleation centres for oxygen precipitation, NCs, created at about 1000K.

Keywords

Nucleation Centre Nucleation Stage Thermal Donor Oxygen Precipitation Oxygen Cluster 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 1996

Authors and Affiliations

  • A. Misiuk
    • 1
  1. 1.Institute of Electron TechnologyWarszawaPoland

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