Abstract
The isochronal annealing behavior in O-ion-implanted Si has been investigated using variable-energy positron annihilation spectroscopy. For the 2x1015 0+/cm2 implanted Si, multivacancy-oxygen complexes induced by room temperature implantation are transformed into multivacancy-multioxygen ones around 600°C. Annealing at 800°C results in the formation of oxygen microclusters, whose concentration increases sublinearly with the dose over the range from 2xl014 /cm2 to 2xl015 /cm2. It is shown that the positron technique is very useful for the study of the oxygen-defect complexes in Si, which are not observable by transmission electron microscope, as well as the open-volume type defects.
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© 1996 Kluwer Academic Publishers
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Fujinami, M. (1996). Interaction of Positrons with Vacancy-Oxygen Complexes and Oxygen Clusters in Silicon. In: Jones, R. (eds) Early Stages of Oxygen Precipitation in Silicon. NATO ASI Series, vol 17. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0355-5_20
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DOI: https://doi.org/10.1007/978-94-009-0355-5_20
Publisher Name: Springer, Dordrecht
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