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Thermal Double Donors in Silicon: A New Insight into the Problem

  • L. I. Murin
  • V. P. Markevich
Part of the NATO ASI Series book series (ASHT, volume 17)

Abstract

The initial stages of the thermal double donor (TDD) formation in Cz-Si crystals are considered. Some basic parameters (binding energy, rate of dissociation, steady-state concentration, diffusivity) of the most abundant oxygen cluster - oxygen dimer are estimated. A good correlation between the behaviours of oxygen dimers and trimers, and the IR absorption bands at 1012 cm-1 and 1006 cm-1 is found. It is shown that some features of the enhanced oxygen diffusion and TDD generation are not consistent with a conception of the very fast diffusing oxygen dimers. Along with dimers the mobility of trimers and the first TDD species is suggested.

Keywords

Interstitial Oxygen Oxygen Loss Thermal Donor Oxygen Complex Oxygen Cluster 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 1996

Authors and Affiliations

  • L. I. Murin
    • 1
  • V. P. Markevich
    • 1
  1. 1.Institute of Solid State and Semiconductor PhysicsAcademy of Sciences of BelarusMinskBelarus

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