Oxygen-Related Luminescence Centres Created in Czochralski Silicon
A review is made of the major luminescence systems created in Czochralski (CZ) silicon by various thermal treatments, and by radiation damage with and without subsequent thermal treatments. Detailed investigations of these luminescence systems were carried out during the 1980s. More recent measurements have clarified some issues and shown that some other areas need to be revisited. Other recent measurements have shown that hydrogen has a dramatic effect on the luminescence centres created in both float-zone (FZ) and CZ Si and that several luminescence centres actually contain hydrogen. It has also been demonstrated that these and other centres can be made optically inactive if too much hydrogen is present.
KeywordsLocal Mode Luminescence Centre Optically Detect Magnetic Resonance Thermal Donor Subsequent Thermal Treatment
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- 1.See, for example: Jones, C.E., Johnson, E.S., Dale Compton, W., Noonan, J.R. and Streetman, B.G. (1973) Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon, J. Appl. Phys. 44, 5402–5410; Minaev, N.S. and Mudryi, A.V. (1981) Thermally-induced defects in silicon containing oxygen and carbon, Phys. Stat. Sol. (a) 68, 561–565, and references therein.Google Scholar
- 10.Davies, G. and Newman, R.C. (1994) Carbon in Monocrystalline Silicon, in Handbook on Semiconductors, Vol. 3, ed. Mahahjan, S., North Holland, Amsterdam.Google Scholar
- 18.Tkachev, V.D. and Mudryi, A.V. (1977) Radiative recombination centres in silicon, irradiated by fast neutrons and ions, Inst. Phys. Conf. Ser. No. 31, 231–243.Google Scholar
- 19.Thewalt, M.L.W. (1982) Exitons, ed. Rashba, E.I. and Sturge, M.D. North Holland, Amsterdam, p393.Google Scholar
- 28.Weber, J. and Watkins, G.D. (1985) Photoluminescence and optically detected magnetic resonance (ODMR) from thermally treated silicon samples, Proc. 13th Int. Conf. on Defects in Semiconductors, The Metallurgical Society of AIME, p661–667Google Scholar
- 30.Safonov, A.N., Lightowlers, E.C., Davies, G., Leary, P., Jones, R. and Öberg, S. (1996) Interstitial carbon-hydrogen interaction in silicon. To be submitted for publication.Google Scholar
- 31.Gower, J.E., Safonov, A.N., Lightowlers, E.C. and Davies, G. (1996). Carbon-hydrogen-oxygen related centre responsible for the photoluminescence I-line (0.965 eV). Published in this book.Google Scholar