Abstract
Although the primary concern relating to a defect in a semiconductor is apt to be the effect it has on the electrical properties of the material, the experimental techniques of choice to identify it, to determine its structure, and unravel its role in various processes occuring in the material are primarily the spectroscopic ones, such as electron paramagnetic resonance (EPR), electron-nuclear double resonance (ENDOR), local vibrational mode (LVM) spectroscopy, or absorption and luminescence associated with electronic transitions involving the defect. In the course of this workshop, we will have the chance to learn in detail how each of these have contributed to our understanding of oxygen and its complexes in silicon.
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Watkins, G.D. (1996). Oxygen-Related Defects in Silicon: Studies Using Stress-Induced Alignment. In: Jones, R. (eds) Early Stages of Oxygen Precipitation in Silicon. NATO ASI Series, vol 17. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0355-5_1
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DOI: https://doi.org/10.1007/978-94-009-0355-5_1
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