Abstract
Important technological efforts have been made in the last five years for implementing the concept of photonic bandgap (PBG) crystals [1] in the optical frequency range. Air/semiconductor crystals are very attractive in view of a monolithic integration in optoelectronic integrated circuits (OEICs), because their large modulation of the refractive index potentially allows to obtain large PBGs for each or eventually both polarizations of light. In order to display a PBG in the near-infrared, the period P of such crystals must however be scaled down to submicron sizes. Photonic properties are very sensitive to the porosity of the crystal as well as to some details of its pattern, which makes the demands in terms of regularity and uniformity difficult to satisfy even for state of the art microfabrication techniques. For instance, the dry etching in a single step of 3D [2] or 2D [3–5] PBG crystals illustrates the current limits of etching techniques: the deviations from a perfect anisotropy limit the depth of good quality crystals to typically 1 µm. Concerning alternative approaches now, the electrochemical etching of deep 2D crystals, which is very successful in the mid-infrared (P≈8 µm) [6], might prove difficult to implement in the near-infrared due to the thinness of the semiconductor sidewalls. Finally, imperfect mask alignment will also plague planar period by period fabrication of 3D PBG crystals [7]. Hopefully, thin 2D PBG crystals are in principle sufficient for most potential applications of PBG crystals in OEICs. Hybrid 3D microcavities formed by a 2D PBG crystal sandwiched by two bragg mirrors have also been proposed as a route toward full spontaneous emission control [3]. The structural quality of thin 2D PBG crystals fabricated by electron-beam lithography and reactive ion etching [3,5] is presumably already good enough to test these proposals.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
Yablonovitch E. (1987) Inhibited spontaneous emission in solid-state physics and electronics, Phys. Rev. Lett. 58, 2059
Yablonovitch E. (1993) Photonic bandgap structures, J. Opt. Soc. Am. B10, 283; see also the contribution of V. Arbet et al in this volume.
Gérard J.M., Izraël A., Marzin J.Y., Padjen R. and Ladan F.R. (1994) Photonic bandgap of two-dimensional dielectric crystals, Solid State Electronics 37, 1341
Gourley P.L., Wendt J.R., Vawter G.A., Brennan T.M., Hammons B.E. (1994) Optical properties of two-dimensional photonic lattices fabricated as honeycomb nanostructures in compound semiconductors, Appi. Phys. Lett. 64, 687
Krauss T., Song Y.P., Thoms S., Wilkinson C.D.W., De La Rue R.M. (1994) Fabrication of 2D photonic bandgap structures in GaAs/GaAlAs, Electronics Lett. 30, 1444
Grüning U., Lehmann V., Engelhart C.M. (1995) Two-dimensional infrared photonic bandgap structures based on porous silicon, Appi. Phys. Lett. 66, 3254
Fan S., Villeneuve P.R., Meade R.D. and J.D. Joannopoulos (1994) Design of 3D photonic crystals at submicron wavelengths, Appi. Phys. Lett. 65, 1466
see e.g. the contribution of P. Russel in this volume.
Robertson W.M., Aijavalingam G., Meade R.D., Brommer K.D., Rappe A.M. and Joannopoulos J.D. (1992) Measurement of photonic band structure in a 2D periodic dielectric array, Phys. Rev. Lett. 68, 2023
De La Rue R.M. and Krauss T., in this volume.
Marzin J.Y., Izraël A. and Birotheau L. (1994) Optical properties of etched GaAs/GaAlAs quantum wires and dots, Solid State Electronics 37, 1091
Goldstein L., Glas F., Marzin J.Y., Charasse M.N. and Le Roux G. (1985) Growth by MBE and characterization of InAs/GaAs strained-layer superlattices, Appi Phys. Lett. 47, 1099
Moison J.M., Houzay F., Barthe F., Leprince L., André E. and Vatel O. (1994) Self-organized growth of regular nanometer scale InAs dots on GaAs, Appi. Phys. Lett. 64, 196
Leonard D., Pond K. and Petroff P.M. (1994) Critical layer thickness for self-assembled InAs islands on GaAs, Phys. Rev. B 50, 11687
Marzin J.Y., Gérard J.M., Izraël A., Barrier D. and Bastard G. (1994) PL of single InAs quantum dots obtained by self-organized growth on GaAs, Phys. Rev. Lett. 73, 716
Grundmann M. et al (1995) Ultranarrow luminescence lines from single quantum dots, Phys. Rev. Lett. 74, 4043
Nirmal M., Murray C.B. and Bawendi M.G. (1994) Phys. Rev. B 50, 2293
Gérard J.M., Marzin J.Y., Zimmermann G., Ponchet A., Cabrol O., Barrier D., Jusserand B., Sermage B. (1996) InAs/GaAs quantum boxes obtained by self-organized growth: intrinsic electronic properties and applications, to appear in Solid State Electronics (proceedings MSS7)
Hunt N.E.J., Vredenberg A.M., Schubert E.F., Becker P.C., Jacobson D.C., Poate J.M. and Zydzik G.J. (1995) Spontaneous emission control in planar structures: Er in Si/Si02 microcavities, in Burstein E. and Weisbuch C. eds Confined electrons and photons, NATO ASI series B340, 715.
See also Vredenberg et al, Phys. Rev. Lett. 71, 517 ( 1993 ).
Rigneault H., in this volume
Gérard J.M. and Weisbuch C., french patent n°9000229 (1990)
Gérard J.M., Génin J.B., Lefebvre J., Moison J.M., Lebouché N. and Barthe F. (1995) Optical investigation of the self-organized growth of InAs/GaAs quantum boxes, J. Crystal Growth 150, 351
Kastler A. (1962) Atomes à l’intérieur d’un interféromètre Pérot-Fabry, Applied Optics 1, 17
Yokohama H., Nishi K., Anan T., Nambu Y., Brorson S.D., Ippen E.P., Suzuki M. (1992) Controlling spontaneous emission and thresholdless laser oscillation with optical microcavities, Optical and Quantum Electronics 24, S245
Björk G., Machida S., Yamamoto Y., Igeta K. (1991) Modification of spontaneous emission rate in planar dielectric microcavity structures, Phys. Rev. B 44, 669
Jewell J.L., Scherer A., McCall S.L., Lee Y.H., Walker S., Harbison J.P., Florez L.T. (1989) Low-threshold electrically pumped vertical cavity surface emitting microlasers, Electronics Letters 25, 1123
Raj R., Oudar J.L., Bensoussan M. (1994) Vertical cavity amplifying photonic switch, Appl. Phys. Lett. 65, 2359
Jewell J.L., Mc Call S.L., Scherer A., Houh H.H., Whitaker N.A., Gossard A.C. and English J.H. (1989) Transverse modes, waveguide dispersion and 30 ps recovery in submicron GaAs/AlAs microresonators, Appl. Phys. Lett. 55, 22
Rivera T., Ladan F.R., Izrael A., Azoulay R., Kuszelewicz R. and J.L. Oudar (1994) Reduced threshold all-optical bistability in etched quantum well microresonators, Appl. Phys. Lett. 64, 869
Baba T., Hamano T., Koyama F. (1991) Spontaneous emission factor of a microcavity DBR surface emitting laser, IEEE J. Quantum. Elec. 27, 1347
Yariv A. (1991) Optical Electronics, Saunders College Publications, San Francisco
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1996 Kluwer Academic Publishers
About this chapter
Cite this chapter
Gerard, J.M., Barrier, D., Marzin, J.Y. (1996). InAs Quantum Boxes: Active Probes For Air/GaAs Photonic Bandgap Microstructures. In: Rarity, J., Weisbuch, C. (eds) Microcavities and Photonic Bandgaps: Physics and Applications. NATO ASI Series, vol 324. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0313-5_19
Download citation
DOI: https://doi.org/10.1007/978-94-009-0313-5_19
Publisher Name: Springer, Dordrecht
Print ISBN: 978-94-010-6626-6
Online ISBN: 978-94-009-0313-5
eBook Packages: Springer Book Archive