Abstract
We discuss technology strategies for the fabrication of both two and three-dimensional photonic microstructures in semiconductors. The importance of the role of III-V semiconductors in optoelectronics is used to justify research on photonic microstructures based on this class of material. The technology armoury already established in III-V semiconductors is outlined, together with ways in which this armoury could be extended to meet the new challenges of fabricating photonic microstructures. While the greater difficulties of realising three-dimensional structures are emphasized, the opportunities for near-future device developments based on two-dimensional photonic microstructures are also recognised.
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References
Yahlonovitch, E. (1987), “Inhibited spontanous emission in solid-state physics and electronics”, Phys. Rev. Lett., 58, 2059–2062:
Yahlonovitch, E. (1993), “Photonic band-gap structures”, J. Opt. Soc. Am B, 10, 283–295; Yablonovitch, E., ‘Photonic Bandstructure’, Chapter in this hook
Cheng, C.C., Sherer, A., Arbet-Engels, V. and Yahlonovitch, E. (1995), “Fabrication of Photonic Band-gap Structures”, 39th Electron, Ion and Photon Beam Meeting, to be published in Jour. Vac. Sci. Tech. B, Nov/Dec, 1995.
Goldstein, L. (1992), “Main aspects of MOCVD and MBE growth technique”, in ‘Waveguide Optoelectronics’, J.H. Marsh and R.M. De La Rue (eds.) (1992), NATO ASI Series E: Applied Sciences, 226, 99–122.
Aoki, M., Sano, H., Suzuki, M., Takahashi, M., Uomi, K. and Takai, M. (1991), “Novel structure MQW electroabsorption modulator/DFB-laser integrated device fabricated by selective area MOCVD growth”, Electron. Lett., 27, 2138–2140;
see also Walther., M., Kapon, E., Hwang, D.M., Colas, E. and Nunes, L. (1991), “Observation of electronic subbands in dense arrays of quantum wires grown by organometallic-chemical- vapor deposition on nonplanar substrates”, Phys.Rev. B,45, 6333–6336
Chavez-Pirson, A., Ando, H., Saito, H. and Kanbe, H. (1994), “Quantum wire microcavity laser made from GaAs fractional layer superlattices”, Appl. Phys. Lett., 64, 1759–1761.
MacDougal, M.H., Zhao, H., Dapkus, P.D., Ziari, M. and Steier, W.H. (1994), “Wide-band width distributed Bragg reflectors using oxide/GaAs multilayers”, Electron. Lett., 30, 1147–1149.
MacDougal, M.H., Dapkus, P.D., Pudikov, V., Zhao, H. and Yang, G.M. (1995), “Ultralow threshold current vertical-cavity surface-emitting lasers with AlAs oxide- GaAs distributed Bragg reflectors”, IEEE Photon. Tech. Lett., 7, 229–231;
Yang, G.M., MacDougal,Dapkus, P.D. (1995), “Ultralow threshold current vertical-cavity surface- emitting lasers obtained with selective oxidation”Electron. Lett.,31, 886–888.
Deppe, D.G., Huffaker, D.L., Shin, J. and Deng, Q. (1995), “Very-low-threshold index-confined microcavity lasers”, IEEE Photon. Tech. Lett., 7, 965–967.
Thompson, G.H.B., “Physics of semiconductor laser devices”, ( John Wiley&Sons, Chichester, 1980 ), 400.
Wilmsen, C.W., Kee, R.W. and Geib, K.M. (1979), “Initial oxidation and oxide/semiconductor interface formation on GaAs”, J.Vac. Sci. Tech, 16, 1434–1438.
Baba, T. and Koma, M. (1995), “Possibility of InP-based 2-diinensional photonic crystal: an approach by the anodization method”, Jpn. J. Appl. Phys., 34, 1405–1408.
Krauss, T., Song, Y.P., Thorns, S., Wilkinson, C.D.W. and De La Rue, R.M. (1994), “Fabrication of 2D photonic bandgap structures in GaAs/AlGaAs”, Electron. Lett., 30, 1444–1446.
Krauss, T.F. and De La Rue, R.M. (1995), “Exploring the two-dimensional photonic bandgap in semiconductors”, Chapter in Photonic Bandgap Materials, ed. C. Soukoulis, Kluwer.
Krauss, T.F. and De La Rue, R.M. (1996), “Optical characterisation of waveguide based photonic microstructures”, accepted for publication in Appl. Phys. Lett.
Yi Yan, A., et al (1980), “Two-dimensional grating unit cell demultiplexer for thin- filin optical waveguides”, IEEE J.Quant. Electron., 16, 1089–1092.
Gruening, U. and Lehmann, V. (1995), “Two-dimensional infrared photonic band gap structure based on porous silicon”, Appl.Phys.Lett., 66, 3254–3256.
Tabib-Azar, M., Kang, S., Machines, A.N., Power, M.B., Barron, A.R., Jenkins, P.P. and Hepp, A.F. (1993), “Electronic passivation of n-type and p-type GaAs using chemical vapour deposited GaS”, Appl. Phys. Lett., 63, 625–627;
Hobson, W.S., Mohideen, U., Pearton, S.J., Slusher, R.E. and Ren, F. (1993), “SiNx/sulphide passivated GaAs/AlGaAs microdisk lasers”, Electron. Lett.,29, 2199–2200
Wada, Y. and Wada, K. (1993), “Relaxation of GaAs surface band bending by atomic layer passivation”, J.Vac.Sci. Technol. B, 11, 1598–1602.
De La Rue, R.M. and Marsh, J.H. (1993), “Integration technologies for III-V semiconductor optoelectronics based on quantum well waveguides”, SPIE Critical Reviews, 45, 259–288.
Beauvais, J., Marsh, J.H., Kean, A.H., Bryce, A.C. and Button, C. (1992), “Suppression of bandgap shifts in GaAs/AlGaAs quantum wells using strontium fluoride caps”, Electron. Lett., 28, 1670–1672.
McLean, C.J., McKee, Lullo, G., Bryce, A.C.. De La Rue, R.M. and Marsh, J.H. (1995), “Quantum well intermixing with high spatial selectivity using a pulsed laser technique”, Electron. Lett., 31, 1285–1286.
Yablonovitch, E., Gmitter, T., Harbison, J.P., Bhat, R. (1987), “Extreme selectivity in the lift-off of epitaxial GaAs films”, Appl.Phys.Lett., 51, 2222–2224.
Demeester, P., Pollentier, I., De Dobbelaere, P., Brys, C., and van Daele, P. (1993), “Epitaxial lift-off and its applications”, Semicond.Sci.Technol., 8, 1124–1135.
Romanov, S., Johnson, N., SotomayorTorres, C.M., Yates, H.M., Pemble, M., Peaker, A., Butko, V. and Fokin, A., “Self-assembled 3-dimensional arrays of InP quantum wires: impact of the dielectic matrix upon optical properties”, to appear in Quantum Confinement: Quantum wires and clots, Eds S Badyopadhyay, M M Cahay, P J Leburton and M Razeghi, Electrochemical Society, Pennington, USA. (1996);Romanov, S.G., SotomayorTorres, C.M., Yates, H.M., Pemble, M.E. and Butko, V., “Optical properties of self-assembled arrays of InP quantum wires confined in channels of chrysotile asbestos”, in preparation; and S G Romanov and C M Sotomayor Torres, “3D photonic bandgap materials based on opals filled with semiconductors”, this volume.
Haus, J.W. (1994), “A brief review of theoretical results for photonic band structures”, Journ. of Mod. Optics, 41, 195–207.
Baba, T. and Matsuzaki, “GalnAsP/GaAs 2-Dimensional photonic crystals, this volume.
Gerard, J.M., Izrael,A., Marzin,J.Y., and Padjen,R. (1994), “Photonic bandgap of two-dimensional dielectric crystals”, Solid State Electronics, 37, 1341–1344.
Wendt,J.R., Vawter,G.A., Gourley,P.L., Brennan,T.M., and Hammons,B.E. (1993), “Nanofabrication of photonic lattice structures in GaAs/AlGaAs”, Journ. Vac. Sci. Tech. B., 11, 2637–2640.
Baba, T and Matsuzaki, T. (1995), “Polarisation changes in spontaneous emission from GalnAsP/InP two-dimensional phototonic crystals”, Electron.Lett., 31, 1776–1778.
Smith, D.R. and Schultz, S. (1994), “Defect studies in a two-dimensional periodic photonic lattice”, Journ. of Mod. Opt., 41, 395–404.
Inoue, K., Wada, M., Sakoda, K., Yamanaka, A., Hayashi, M.,and Haus, J.W.(1994),“Fabrication of two-dimensional photonic band structure with near-infrared band gap”, Jpn.J.Appl.Phys., 33, L1463–1465.
Atkin, D., Russel, P.St.J., and Birks, T.A., (1995), “Photonic bandstructure of guided bloch modes in high index films fully etched through with periodic microstruc- ture”, submitted for publication.
Fan, S.H., Villeneuve, P.R., Meade, R.D., Joannopoulos, J.D. (1995), “Design of 3-dimensional photonic crystals at submicron length scales”, Appl. Phys. Lett. 65, 1466–1468; also this volume.
Levi, A.F.J., McCall, S.L., Pearton, S.J. and Logan, R.A. (1993), “Room temperature operation of submicrometre radius disk laser”, Electron. Lett., 29, 1666–1667; Mohideen, U., “Thumbtack lasers”, this volume.
Zhang, J.P., Chu, D.Y., Wu, S.L., Ho, S.T., Bi, W.G., Tu, C.W., Tiberio, R.C. (1995)“Photonic-wire laser”, Phys.Rev.Lett., 75, 2678–2681
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De La Rue, R.M., Krauss, T.F. (1996). Strategies for the Fabrication of Photonic Microstructures in Semiconductors. In: Rarity, J., Weisbuch, C. (eds) Microcavities and Photonic Bandgaps: Physics and Applications. NATO ASI Series, vol 324. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0313-5_16
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DOI: https://doi.org/10.1007/978-94-009-0313-5_16
Publisher Name: Springer, Dordrecht
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