Pseudomorphic HEMTs: Device Physics and Materials Layer Design

  • Thomas Grave
Part of the NATO ASI Series book series (ASHT, volume 14)


In this paper, pseudomorphic HEMTs on GaAs substrate and both lattice-matched and pseudomorphic HEMTs on InP substrate are treated. First, the basic requirements are considered that must be met by any HEMT epitaxial layer sequence. They are compared to the fundamental possibilities for layer growth that exist within the system of III-V compound semiconductors, and the five most common HEMT layer structures are discussed. An elementary introduction into HEMT device physics is given with special emphasis on the influence of specific layer schemes on charge control. The small-signal equivalent network is used to point out differences between intrinsic and extrinsic device due to the presence of parasitics. Guidelines for HEMT design with respect to analog low-noise and power applications are given. Most optimization considerations are illustrated by means of GaAs-based HEMT examples. Properties of InP-based devices are treated more concisely. Overviews over the state-of-the-art concerning high-frequency, low-noise and power performance are presented for both types of HEMTs, and a selection of future concepts for further improvements is outlined.


Quantum Well GaAs Substrate Indium Content High Electron Mobility Transistor IEEE Electron Device 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Kluwer Academic Publishers 1996

Authors and Affiliations

  • Thomas Grave
    • 1
  1. 1.Corporate Research and DevelopmentSiemens AGMunichGermany

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