Path-Integral Calculation of the Electron Density of States in Mis-Structures

  • G. Slacheva
  • I. Yanchev
Chapter
Part of the NATO ASI Series book series (ASHT, volume 14)

Abstract

The problem of determining the electron spectrum of disordered structures is currently being pursued with renewed interest owing to its importance from both the technological and fundamental point of view. Semiconductor device characteristics critically depend on the electronic density of states in the band gap tail region. The lack of information near the semiconductor band edges is a well known disadvantage of the experimental methods for obtaining the electronic density of states spectra at the semiconductor-dielectric interface. A number of theoretical approaches have been proposed to solve this problem but the advantage of the path-integral method in real space and time is that it provides an adequate treatment of both the states near the band gap center and the band tail states. This is the reason of choosing the latter for our problem.

Keywords

Interfacial Plane Random Potential Potential Fluctuation Surface Charge Distribution Band Tail State 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Kluwer Academic Publishers 1996

Authors and Affiliations

  • G. Slacheva
    • 1
  • I. Yanchev
    • 2
  1. 1.Institute of BiophysicsBulgarian Academy of Sciences AcadSofiaBulgaria
  2. 2.Faculty of PhysicsSofia University St. Kliment OchridskiSofiaBulgaria

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