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Chemical Vapor Deposition (CVD) and Infiltration (CVI)

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Carbide, Nitride and Boride Materials Synthesis and Processing

Abstract

Chemical vapor deposition (CVD) takes advantage of gas phase reactants to form desired phases in situ. CVD reactions are not unlike those described in Part Four, where ceramic materials are prepared from vapor phase precursors. The significant difference is that in CVD the resultant material is in the form of a coating deposited on a substrate. Thus, the CVD process takes advantage of the lowered energies for phase formation afforded by nucleation and growth on existing surfaces.

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  1. Metals and Ceramics Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA

    Theodore M. Besmann, David P. Stinton, Richard A. Lowden & Woo Y. Lee

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  1. University of Colorado, Boulder, USA

    Alan W. Weimer (Professor of Chemical Engineering) (Professor of Chemical Engineering)

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Besmann, T.M., Stinton, D.P., Lowden, R.A., Lee, W.Y. (1997). Chemical Vapor Deposition (CVD) and Infiltration (CVI). In: Weimer, A.W. (eds) Carbide, Nitride and Boride Materials Synthesis and Processing. Springer, Dordrecht. https://doi.org/10.1007/978-94-009-0071-4_22

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